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Home > chinese-english > "carbonization process" in English

English translation for "carbonization process"

碳化过程

Related Translations:
carbonization:  n.【化学】碳化(作用)。
carbonization temperature:  碳化温度
carbonization zone:  (烟支燃烧)碳化区碳化层区
filament carbonization:  灯丝碳化
carbonization test:  (润滑油)积炭试验碳化试验
carbonization effluent:  焦化流出水碳化出水
ion carbonization:  离子渗碳
electrical carbonization:  电法炼焦电碳化
carbonization chamber:  焦化室炭化室
Example Sentences:
1.Improvement of 20crni2mo gear carbonization process
材料齿轮渗碳工艺改进
2.Moreover , high quality nanocrystalline p - sic film was attained with the integration of the pre - carbonization process and the substrate bias effect
进一步结合衬底预碳化以及对衬底的偏压作用,得到了高质量的纳米? sic薄膜。
3.This thesis reports some results on the hot press sintering of nano - composite wc - co powder , which is prepared by spray pyrogenation & continuous deoxidization and carbonization process
本课题采用热压烧结技术对以喷雾热解?连续还原碳化法制备的纳米复合wc - co粉末进行了热压烧结研究。
4.This article discuss several effecting factors about pan - base carbon fiber strength . we make emphasis on annlysis the influencing factors of polymerization pro - oxygen carbonization process
摘要本文分析了碳纤维研发过程中对强度的影响因素。著重对原丝生产、预氧化过程、碳化过程中的主要影响因素分别进行了分析。
5.By increasing the h2 dilution ratio , it is found that atomic hydrogen can selectively etch amorphous phase and stabilize crystalline phase . from the study on the distance from substrate to catalyzer , choosing a proper distance can ensure the gas fully decomposed , while a relatively low substrate temperature can cause the nanocrystalline particles to lose mobility and keep their sizes . the pre - carbonization process can enhance the nucleation density and make the growth of high quality nanocrystalline p - sic films much easier
实验结果表明:随着工作气压的减小,薄膜的晶粒尺寸有所减小;通过提高氢气稀释度,利用原子氢在成膜过程中起的刻蚀作用,可以稳定结晶相并去除杂相;选择适当的热丝距离能保证反应气体充分分解,又使衬底具有较高的过冷度,是形成纳米薄膜的重要条件;采用分步碳化法可以提高形核密度,有利于获得高质量的纳米- sic薄膜;衬底施加负偏压可以明显提高衬底表面的基团的活性,因负偏压产生的离子轰击还能造成高的表面缺陷密度,形成更多的形核位置。
6.The quality of buffer layer and thin films was analyzed by afm , xrd , rheed and xps respectively . the effect of the experimental parameters such as carbonization time , working pressure , c source gas flow rate , carbonization temperature , different carbonization gas and substrate on the carbonization process was studied firstly . it was observed that the size of particles was increased with the increase of carbonization time and the rms was opposite , but the trend was reduced while the carbonization time was long enough ; the size of particles was increased with the increase of working pressure too , and choosing a proper working pressure could get a smooth surface ; the size of particles was unobviously changed while the gas flow rate was low , but it was notability increased with the increase of gas flow rate while the gas flow rate was high enough , and a smooth surface could be also obtained by choosing a proper gas flow rate ; with the increase of carbonization temperature , the size of particles was increased , the rms is decreased and a good single - crystalline carbonization layer could be obtained , but a rough surface was formed at a excessive high temperature ; the rms of
对于碳化工艺,侧重研究了碳化时间、反应室气压、 c源气体的流量、碳化温度以及不同种类的c源气体、基片取向等因素对碳化层质量的影响,研究结果表明:随着碳化时间的增长,碳化层的晶粒尺寸随之变大,表面粗糙度随之降低,但当碳化到一定时间之后,碳化反应减缓,碳化层的晶粒尺寸以及表面粗糙度的变化幅度变小;碳化层的晶粒尺寸随反应室气压的升高而变大,适中的反应室气压可得到表面比较平整的碳化层;在c源气体的流量相对较小时,碳化层的晶粒尺寸随气体流量的变化不明显,但当气体流量增大到一定程度时,碳化层的晶粒尺寸随气体流量的增大而明显变大,同时,适中的气体流量得到的碳化层表面粗糙度较低;碳化温度较低时,碳化层的晶粒取向不明显,随着碳化温度的升高,碳化层的晶粒尺寸明显变大,且有微弱的单晶取向出现,但取向较差,同时,适中的碳化温度可得到表面平整的碳化层;相比于c _ 2h _ 2 ,以ch _ 4作为c源气体时得到的碳化层表面平整得多;比起si ( 100 ) ,选用si ( 111 )作为基片生长的碳化层的晶粒取向一致性明显更好。
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